MRF8S21100HSR3 datasheet
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О ДАТАШИТЕ
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МаркировкаMRF8S21100HSR3
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ПроизводительFreescale Semiconductor
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ОписаниеFreescale Semiconductor MRF8S21100HSR3 RoHS: yes Configuration: Single Transistor Polarity: N-Channel Frequency: 2.11 GHz to 2.17 GHz Gain: 18.3 dB at 2.17 GHz Output Power: 24 W Drain-Source Breakdown Voltage: 65 V Gate-Source Breakdown Voltage: 10 V Maximum Operating Temperature: + 150 C Package / Case: NI-780S Mounting Style: SMD/SMT Lifecycle Status: Active Alternative: FREESCALE MRF8S21100HSR3,FREE MRF8S21100HSR3,FSL MRF8S21100HSR3,FRS MRF8S21100HSR3,MTR MRF8S21100HSR3,FREESC MRF8S21100HSR3,FREESCAL MRF8S21100HSR3,FRE MRF8S21100HSR3,FREESCALE SEMI MRF8S21100HSR3,Freescale Semiconductor Inc MRF8S21100HSR3,FREESCALE SEMICONDUC MRF8S21100HSR3,FRESSCAL MRF8S21100HSR3,FREESCALE-PB MRF8S21100HSR3,FRS/MOT MRF8S21100HSR3,FREESCALE SEMIC MRF8S21100HSR3,FREESCALES MRF8S21100HSR3,FREESCALE SEMICONDUCTOR (VA) MRF8S21100HSR3,FREESCALE/PBF MRF8S21100HSR3,FSCL MRF8S21100HSR3,FRE-SEMI MRF8S21100HSR3,Freescale Semiconductor UK Limited MRF8S21100HSR3
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Количество страниц15 шт.
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Форматы файлаHTML, PDF
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